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APT100GF60JU3
ISOTOP(R) Buck chopper NPT IGBT
C
VCES = 600V IC = 100A @ Tc = 80C
G
Application * AC and DC motor control * Switched Mode Power Supplies Features
E
* Non Punch Through (NPT) THUNDERBOLT IGBT (R)
A
E G C
A
* * *
- Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
ISOTOP
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC1 IC2 ICM VGE PD IFA V IFRMS
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C
30 39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT100GF60JU3- Rev 1
June, 2006
Max ratings 600 120 100 320 20 416
Unit V A V W
APT100GF60JU3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 100 1000 2.5 5 150 Unit A V V nA
2.0 2.2 3
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 100A Resistive Switching (25C) VGE = 15V VBus = 400V IC = 100A R G = 5
Min
Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5
Max
Unit pF
nC
ns
mJ
Inductive Switching (125C) VGE = 15V VBus = 400V IC = 100A R G = 5
ns
mJ
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APT100GF60JU3
Chopper diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/s IF = 30A VR = 400V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 1.6 1.9 1.4 44 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V A pF
Tj = 125C Tj = 25C Tj = 125C
A nC ns nC A
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min IGBT Diode 2500 -55
Typ
Max 0.3 1.21 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
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APT100GF60JU3
Typical IGBT Performance Curve
Output characteristics (VGE=15V) 350 300 Output Characteristics (VGE=10V)
Ic, Collector Current (A)
300 250 200 150 100 50 0 0
Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
Tc=-55C Tc=25C
250 200 150 100 50 0
250s Pulse Test < 0.5% Duty cycle
Tc=-55C
Tc=25C
Tc=125C
Tc=125C
1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
300
VGE, Gate to Emitter Voltage (V)
18
250s Pulse Test < 0.5% Duty cycle
Gate Charge
Ic, Collector Current (A)
250 200 150 100 50 0 0
16 14 12 10 8 6 4 2 0 0
IC = 100A TJ = 25C
VCE=120V VCE=300V
VCE=480V
TJ =25C TJ =125C 1 2 3 4 5 6 TJ =-55C 7 8 9 10
50
100
150
200
250
300
350
VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V)
Gate Charge (nC) On state Voltage vs Junction Temperature
VCE, Collector to Emitter Voltage (V)
8 7 6 5 4 3 2 1 0 6 8 10 12 14 16
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 Ic=50A
250s Pulse Test < 0.5% Duty cycle VGE = 15V
Ic=200A
Ic=200A
Ic=100A
Ic=100A Ic=50A
50
75
100
125
TJ, Junction Temperature (C) DC Collector Current vs Case Temperature
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.00 0.90 0.80 0.70 -50
Ic, DC Collector Current (A)
160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150
TC, Case Temperature (C)
TJ, Junction Temperature (C)
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APT100GF60JU3- Rev 1
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0
25
50
75
100 125
June, 2006
APT100GF60JU3
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35 250 Turn-Off Delay Time vs Collector Current
30 VGE = 15V 25 Tj = 25C VCE = 400V RG = 5 25 50 75 100 125 150
200
VGE=15V, TJ=125C
150 VGE=15V, TJ=25C
20
100
VCE = 400V RG = 5 25 50 75
15 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80 VCE = 400V RG = 5
50 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 5
tf, Fall Time (ns)
tr, Rise Time (ns)
60
60
TJ = 125C
40
VGE=15V, TJ=125C
40
20
20
TJ = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ)
8
Eon, Turn-On Energy Loss (mJ)
6 5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
6 4 2 0 0
VCE = 400V RG = 5 TJ =125C, VGE=15V
VCE = 400V VGE = 15V RG = 5
TJ = 125C
T J=25C, VGE=15V
TJ = 25C
25
50
75
100
125
150
0
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
25 50 75 100 125 ICE, Collector to Emitter Current (A)
150
Switching Energy Losses vs Junction Temp.
16
Switching Energy Losses (mJ)
10
VCE = 400V VGE = 15V TJ= 125C
Switching Energy Losses (mJ)
Eon, 200A
Eoff, 200A
12
8 6 4 2
VCE = 400V V GE = 15V RG = 5
Eon, 200A
Eoff, 100A
Eoff, 200A
8
Eon, 100A Eoff, 50A
Eon, 100A Eoff, 100A Eoff, 50A Eon, 50A
4
Eon, 50A
0 0 10 20 30 40 Gate Resistance (Ohms) 50
0
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0
25 50 75 100 TJ, Junction Temperature (C)
125
June, 2006
APT100GF60JU3
Capacitance vs Collector to Emitter Voltage 10000 IC, Collector Current (A) Cies C, Capacitance (pF) 350 300 250 200 150 100 50 0 0 10 20 30 40 50 0 VCE, Collector to Emitter Voltage (V) 200 400 600 800 VCE, Collector to Emitter Voltage (V) Minimum Switching Safe Operating Area
1000 Coes Cres 100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0.1 0.05 0 0.00001
Fmax, Operating Frequency (kHz)
120 100 80 60 40 20 0
Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5 TJ = 125C
20
40 60 80 100 IC, Collector Current (A)
120
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June, 2006
APT100GF60JU3
Typical Diode Performance Curve
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APT100GF60JU3
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APT100GF60JU3
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anode
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Emitter
Dimensions in Millimeters and (Inches)
Gate
June, 2006 9-9 APT100GF60JU3- Rev 1
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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